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ZXTD4591E6
DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300
DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. FEATURES * Low Equivalent On Resistance - NPN - PNP RCE(sat) 210m at 1A RCE(sat) 355m at -1A
SOT23-6
C2
C1
* * * * * * *
Low Saturation Voltage hFE characterised up to 2A IC=1A Continuous Collector Current SOT23-6 package
B2
B1
E2
E1
APPLICATIONS MOSFET gate driver Low Power Motor Drive Low Power DC-DC Converters
ORDERING INFORMATION DEVICE ZXTD4591E6TA ZXTD4591E6TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units
C1 B1 C2
E1 B2 E2
Top View
4591
DEVICE MARKING 4591
ISSUE 1 - JULY 2000 1
ZXTD4591E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT NPN 80 60 5 2 1 500 1.1 8.8 1.7 13.6 -55 to +150 LIMIT PNP -80 -60 -5 -2 -1 -500 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/C W mW/C C
PD
T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - JULY 2000 2
ZXTD4591E6
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) h FE 100 100 80 15 150 10 MIN. -80 -60 -5 -100 -100 -100 -0.3 -0.6 -1.2 -1.0 300 TYP. MAX. UNIT V V V nA nA nA V V V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-60V V EB =-4V V CES =-60V I C =-500mA, I B =-50mA* I C =-1A, I B =-100mA* I C =-1A, I B =-100mA* I C =-1A, V CE =-5V* I C =-1mA, V CE =-5V* I C =-500mA, V CE =-5V* I C =-1A, V CE =-5V* I C =-2A, V CE =-5V* MHz pF I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz
Transition Frequency Output Capacitance
fT C obo
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 1 - JULY 2000 3
ZXTD4591E6
NPN ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) h FE 100 100 80 30 150 10 MIN. 80 60 5 100 100 100 0.25 0.5 1.1 1.0 300 TYP. MAX. UNIT V V V nA nA nA V V V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =60V V EB =4V V CES =60V I C =500mA, I B =50mA* I C =1A, I B =100mA* I C =1A, I B =100mA* I C =1A, V CE =5V* I C =1mA, V CE =5V* I C =500mA, V CE =5V* I C =1A, V CE =5V* I C =2A, V CE =5V* MHz pF I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz
Transition Frequency Output Capacitance
fT C obo
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 1 - JULY 2000 4
ZXTD4591E6
NPN TYPICAL CHARACTERISTICS
0.6 0.5 0.4
IC/IB=10 IC/IB=50
0.6
+25 C IC/IB=10
0.5 0.4 0.3 0.2 0.1 0
-(V)
CE(sat)
0.2 0.1 0 1mA 10mA 100mA 1A 10A
V
V
CE(sat)
-(V)
0.3
-55 C +25 C +100 C
1mA
10mA
100mA
1A
10A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
300
VCE=5V
1.4 1.2 1.0
IC/IB=10
240 - Typical Gain
+100 C
180
+25 C
0.8 - (V) 0.6
-55 C
120
-55 C
BE(sat)
FE
0.4 0.2
+25 C +100 C
h
60
0 1mA
V
0 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
1.2 1.0 - (V) 0.8 0.6 0.4 0.2 0
VCE=5V
10
I -Collector Current (A)
1
BE(on)
0.1
-55 C +25 C +100 C
0.01
DC 1s 100ms 10ms 1ms 100s
V
C
1mA
10mA
100mA
1A
10A
0.001 0.1
1
10
100
IC-Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
ISSUE 1 - JULY 2000 5
ZXTD4591E6
PNP TYPICAL CHARACTERISTICS
0.6 0.5
+25 C
0.6 0.5
IC/IB=10
VCE(sat) -(V)
VCE(sat) -(V)
0.4 0.3
IC/IB=10
0.4 0.3 0.2 0.1 0
0.2 0.1 0 1mA
IC/IB=50
-55 C +25 C +100 C
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
400
VCE=5V
IC/IB=10
1.0 300
+100 C
hFE - Typical Gain
VBE(sat) - (V)
0.8 0.6 0.4 0.2
-55 C +25 C +100 C
200
+25 C
100
-55 C
0 1mA
0 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
IC-Collector Current
IC-Collector Current
hFE V IC
1.2 1.0 10
VBE(sat) v IC
VCE=5V
VBE(on) - (V)
0.8 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A
-55 C +25 C +100 C
IC-Collector Current (A)
1
0.1
DC 1s 100ms 10ms 1ms 100us
0.01 0.1V 1V 10V 100V
IC-Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
ISSUE 1 - JULY 2000 6
ZXTD4591E6
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
b
e L2
E
E1
e1 D
a
DATUM A
C
A
A2
A1
DIM Millimetres Min A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF
0
Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002
Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60
10
0
10
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2000 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JULY 2000 7

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